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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3796 description collector-base breakdown voltage- : v (br)cbo = 800v(min.) low collector saturation voltage high speed switching applications designed for high speed sw itching applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 800 v v ces collector-emitter voltage 800 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 8 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b b base current-continuous 3 a collector power dissipation @t a =25 2.5 p c collector power dissipation @t c =25 70 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3796 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; l= 25mh 500 v v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 0.6a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 0.6a b 1.5 v i cbo collector cutoff current v cb = 800v; i e = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 100 a h fe-1 dc current gain i c = 0.1a; v ce = 5v 15 h fe-2 dc current gain i c = 3a; v ce = 5v 8 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v; f= 1mhz 8 mhz switching times t on turn-on time 1.0 s t s storage time 3.0 s t f fall time i c = 3a; i b1 = -i b2 = 0.6a; v cc = 200v 1.0 s isc website www.iscsemi.cn |
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